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| CM15TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMODTM H-Series Module 15 Amperes/600 Volts A B L GuP SuP P K GvP SvP K GwP SwP M T - DIA. (2 TYP.) D H N U V W J E GuN SuN GvN SvN GwN SwN Q S C .110 TAB S Q S P .250 TAB G N F R P Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (70ns) Free-Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM15TF-12H is a 600V (VCES), 15 Ampere Six-IGBT IGBTMODTM Power Module. Type CM Current Rating Amperes 15 VCES Volts (x 50) 12 GuP SuP U GvP SvP V GwP SwP W GuN SuN N GvN SvN GwN SwN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 3.54 2.990.01 2.52 1.54 0.98 0.90 0.87 0.75 0.71 Millimeters 90.0 76.00.2 64.0 39.0 25.0 23.0 22.0 19.0 18.0 Dimensions K L M N P Q R S T Inches 0.67 0.63 0.59 0.56 0.51 0.43 0.26 0.24 0.22 Dia. Millimeters 17.0 16.0 15.0 14.1 13.0 11.0 6.5 6.0 Dia. 5.5 295 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM15TF-12H Six-IGBT IGBTMODTM H-Series Module 15 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M5 Mounting Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd - - VRMS CM15TF-12H -40 to +150 -40 to +125 600 20 15 30* 15 30* 100 17 150 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb Grams Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 1.5mA, VCE = 10V IC = 15A, VGE = 15V IC = 15A, VGE = 15V, Tj = 150C Total Gate Charge Diode Forward Voltage VCC = 300V, IC = 15A, VGS = 15V IE = 15A, VGS = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.1 2.15 45 - Max. 1.0 0.5 7.5 2.8** - - 2.8 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 15A, diE/dt = -30A/s IE = 15A, diE/dt = -30A/s VCC = 300V, IC = 15A, VGE1 = VGE2 = 15V, RG = 42 VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.04 Max. 1.5 0.5 0.3 120 300 200 300 110 - Units nF nF nF ns ns ns ns ns Diode Reverse Recovery Time Diode Reverse Recovery Charge C Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 1.30 3.50 0.092 Units C/W C/W C/W 296 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM15TF-12H Six-IGBT IGBTMODTM H-Series Module 15 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 30 COLLECTOR CURRENT, IC, (AMPERES) 30 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V 15 12 VCE = 10V Tj = 25C Tj = 125C 5 VGE = 15V Tj = 25C Tj = 125C 4 20 20 11 3 10 10 9 7 8 10 2 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 0 0 10 20 30 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) EMITTER CURRENT, IE, (AMPERES) 103 CAPACITANCE, Cies, Coes, Cres, (nF) 101 Tj = 25C 8 Cies IC = 30A 100 Coes 6 IC = 15A 102 4 10-1 Cres 2 IC = 6A VGE = 0V 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-2 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE, VGE 103 103 REVERSE RECOVERY TIME, t rr, (ns) 101 20 SWITCHING TIME, (ns) tf 16 VCC = 200V 12 102 td(off) td(on) 102 Irr t rr 100 VCC = 300V 8 tr VCC = 300V VGE = 15V RG = 42 Tj = 125C di/dt = -30A/sec Tj = 25C 4 101 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 10-1 102 0 0 10 20 30 40 50 60 GATE CHARGE, QG, (nC) 297 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM15TF-12H Six-IGBT IGBTMODTM H-Series Module 15 Amperes/600 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 10-2 10-1 100 101 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 10-2 10-1 100 101 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 1.3C/W 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 3.5C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 298 |
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